Description of Work Packages
WP1: Multi-Physics Modelling of THz Plasmonic Amplification
WP1 has the ambitious goal to provide the mathematical platform, with related software implementation, which requires modelling the highly challenging problem of 2D material-based THz amplification, and to translate theoretical concepts into real devices featuring optimum performance. WP1 targets:
- Development of the multi-physics model for 2D material-based plasmonic amplification,
- Development of a dedicated software at system level for the proposed THz amplifier,
- Specifications and full system modelling of the THz amplifier / final demonstrators.
WP2: Development, Transfer and Characterization of 2D Materials
WP2 is dedicated to the growth, transfer and characterization of 2D materials. 2D growth process development and the 2D material-properties optimizations will be done with respect to the specifications and design of the final demonstrators. Growth will be systematically followed by ex situ characterizations to assess the quality of the layers: AFM, Raman spectroscopy, X-ray diffraction, XPS. The carrier mobility will also be measured using the Hall effect with benchmarking against Si before and after transfer. Wet or dry techniques may be used to transfer the layers to other substrates suitable for THz measurements. Finally, promising 2D materials for maximum THz amplification will be readied for transfer over large areas (mm2 to cm2) using μTP technique. WP2 targets:
- Growth and characterization of optimized 2D materials with the requirements from WP1 for the maximum THz amplification.
- Development of the μTP technique for the transfer of the selected 2D materials onto appropriate substrate.
- Providing the selected 2D materials to WP3 for the integration of it with the selected grating-gate structure.
WP3: Development of Plasmonic Device Architecture
WP3 is dedicated to develop the plasmonic device architecture, particularly the THz coupling structures. Two different coupling electrode architectures will be developed: (i) metal type grating-gate electrodes and (ii) 2D material type grating-gate electrodes. μTP techniques developed in WP2 will be utilized to transfer films onto host devices. Afterwards the integrated structures will be realized within a FET architecture. Amplifiers will be characterized using tools based on broadband THz sources. WP3 targets:
- Development of THz Amplifier architectures based on 2D material plasmons to maximize the THz amplification.
- Development of the process integration scheme for THz Amplifiers together with the FET structure.
- Characterization of THz Plasmonic Amplifier as sub-module based on broadband THz source.
WP4: BiCMOS Coupled Plasmonic THz Amplifier System Proof of Concept
WP4 will perform the final assembly and proof of concept demonstration of fully BiCMOS coupled plasmonic THz amplifier system. Under this WP, a silicon-based THz-Source will be developed fully in a commercial and qualified SiGe BiCMOS technology from IHP. An array type THz-Source is planned with a coupling structure as the radiator of SiGe BiCMOS THz source. The developed plasmonic 2D material-based THz amplifier (in WP3) will be combined with the SiGe BiCMOS THz Source for the demonstration of fully silicon-based THz signal generation and amplification. WP4 targets:
- Design and fabrication of THz-Source based on SiGe BiCMOS process.
- Design of antenna structure on SiGe BiCMOS chip for maximum THz coupling to plasmonic THz amplifier.
- Characterization of the single-die plasmonic THz amplification system.
WP5: Project Management and Dissemination Activities
WP5 will ensure effective and efficient coordination of the project and the consortium and the application of best management practices. WP5 targets:
- All legal, contractual and administrative issues.
- Establishment and support of the project management structure, continuously assess project progress and thereby ensure quality control of project deliverables, milestones and impact, resolving possible conflicts.
- Track any innovations developed within the course of the project in order to support the protection of any IP generated by the consortium and individual partners and to publish the project results in relevant forums and present them on various relevant industrial and academic forums throughout Europe.
The Plasnano project is funded by European Innovation Council program under the grant agreement No 101099552.
About Plasnano
PLASNANO aims to revolutionize terahertz (THz) technology by developing novel plasmonic amplifiers based on advanced 2D materials, such as graphene and transition metal dichalcogenides. These amplifiers will be seamlessly integrated into SiGe BiCMOS platforms using innovative microtransfer printing (µTP) techniques. The project will also create a multi-scale modeling platform to optimize device design, efficiency, and interactions between THz waves and 2D materials. By delivering compact, high-power, and broadband THz technologies, PLASNANO enables transformative applications in wireless communication, imaging, sensing, and security, positioning itself as a leader in the rapidly expanding THz market.